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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9318401 B1

PDFFull Text
Date of Patent:
Apr. 19, 2016

Filed:

May. 08, 2012

Glass composition for protecting semiconductor junction, method of manufacturing semiconductor device and semiconductor device

Applicants:

Koya Muyari, Hanno, JP;

Koji Ito, Hanno, JP;

Atsushi Ogasawara, Hanno, JP;

Kazuhiko Ito, Hanno, JP;

Inventors:

Koya Muyari, Hanno, JP;

Koji Ito, Hanno, JP;

Atsushi Ogasawara, Hanno, JP;

Kazuhiko Ito, Hanno, JP;

Assignee:

SHINDENGEN ELECTRIC MANUFACTURING CO., LTD., Tokyo, JP;

Attorney:

Hauptman Ham, LLP

Primary Examiner:

Calvin Choi

Assistant Examiner:

Xiaoming Liu

Int. Cl.
CPC ...
C03C 3/076 (2006.01); B32B 17/00 (2006.01); H01L 21/00 (2006.01); H01L 23/29 (2006.01); H01L 29/66 (2006.01); H01L 29/861 (2006.01); H01L 21/02 (2006.01); H01L 21/762 (2006.01); C03C 8/04 (2006.01); H01L 21/56 (2006.01); C03C 3/093 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/291 (2013.01); C03C 3/093 (2013.01); C03C 8/04 (2013.01); H01L 21/02112 (2013.01); H01L 21/02164 (2013.01); H01L 21/02178 (2013.01); H01L 21/02192 (2013.01); H01L 21/02345 (2013.01); H01L 21/56 (2013.01); H01L 21/76232 (2013.01); H01L 29/66136 (2013.01); H01L 29/8611 (2013.01); H01L 29/8613 (2013.01); C03C 2207/00 (2013.01); H01L 23/3171 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Provided is a glass composition for protecting a semiconductor junction which contains at least SiO, BO, AlO, ZnO and at least two oxides of alkaline earth metals selected from a group consisting of CaO, MgO and BaO, and substantially contains none of Pb, As, Sb, Li, Na and K, wherein an average linear expansion coefficient within a temperature range of 50° C. to 550° C. falls within a range of 3.33×10to 4.13×10. A semiconductor device having high breakdown strength can be manufactured using such a glass material containing no lead in the same manner as a conventional case where 'a glass material containing lead silicate as a main component' is used.

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