The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2016
Filed:
Mar. 04, 2014
Applicant:
SK Hynix Inc., Icheon, KR;
Inventor:
Byung Wook Bae, Icheon, KR;
Assignee:
SK HYNIX INC., Icheon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/58 (2006.01); H01L 21/66 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
H01L 22/14 (2013.01); H01L 22/34 (2013.01); H01L 23/481 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A semiconductor device can detect a defective or faulty part caused by copper (Cu) ions migrated from a through silicon via (TSV), resulting in improvement of device characteristics and reliability. The semiconductor device includes: a semiconductor substrate including an active region defined by a device isolation region; a through silicon via (TSV) formed to pass through the semiconductor substrate; and a test unit formed in the vicinity of the TSV so as to determine the presence or absence of metal pollution caused by the TSV.