The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 19, 2016

Filed:

Oct. 12, 2012
Applicant:

Mitsui Mining & Smelting Co., Ltd., Tokyo, JP;

Inventors:

Ryuichi Sato, Saitama, JP;

Yohei Maruyama, Saitama, JP;

Atsushi Koike, Saitama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09G 1/02 (2006.01); H01L 21/306 (2006.01); H01L 21/02 (2006.01); B24B 37/04 (2012.01); C09K 3/14 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30625 (2013.01); B24B 37/044 (2013.01); C09G 1/02 (2013.01); C09K 3/1409 (2013.01); C09K 3/1463 (2013.01); H01L 21/02024 (2013.01); H01L 21/02527 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01);
Abstract

The present invention provides a polishing slurry capable of polishing even high-hardness materials such as silicon carbide and gallium nitride at a high polishing speed. The present invention is a polishing slurry including a slurry containing a manganese oxide particle and a manganate ion for polishing high-hardness materials having a Mohs hardness of 8 or higher. In the present invention, the manganese oxide particle in the slurry is preferably 1.0 mass % or more; the manganese oxide is preferably manganese dioxide; and the manganate ion is preferably permanganate ion. The polishing slurry according to the present invention enables even high-hardness hardly-machinable materials such as silicon carbide and gallium nitride to be polished smoothly at a high speed.


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