The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2016
Filed:
Apr. 14, 2015
Weon-hong Kim, Suwon-si, KR;
Moon-kyun Song, Anyang-si, KR;
Min-joo Lee, Seoul, KR;
Hyung-suk Jung, Suwon-si, KR;
Weon-Hong Kim, Suwon-si, KR;
Moon-Kyun Song, Anyang-si, KR;
Min-Joo Lee, Seoul, KR;
Hyung-Suk Jung, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of fabricating a semiconductor device includes forming an interface layer on a substrate, forming a first gate insulating layer having a first dielectric constant on the interface layer, forming a second gate insulating layer having a second dielectric constant smaller than the first dielectric constant on the first gate insulating layer, annealing the substrate, nitriding a resultant of the annealed first and second gate insulating layers to form a nitrided gate insulator, forming a work function control layer on the nitride gate insulator, and forming a metal gate electrode on the work function control layer. At least one of the work function control layer and the metal gate electrode is of or includes aluminum (Al).