The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 19, 2016

Filed:

Feb. 04, 2014
Applicant:

Marvell World Trade Ltd., St. Michael, BB;

Inventors:

Zining Wu, Los Altos, CA (US);

Xueshi Yang, Cupertino, CA (US);

Assignee:

Marvell World Trade LTD., St. Michael, BB;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/00 (2006.01); G11C 29/50 (2006.01); G11C 11/56 (2006.01); G11C 16/26 (2006.01); G06F 11/10 (2006.01); G06F 11/14 (2006.01);
U.S. Cl.
CPC ...
G11C 29/50004 (2013.01); G11C 11/5642 (2013.01); G11C 16/26 (2013.01); G06F 11/1008 (2013.01); G06F 11/1044 (2013.01); G06F 11/1068 (2013.01); G06F 11/1076 (2013.01); G06F 11/1482 (2013.01); G11C 2211/5634 (2013.01);
Abstract

A system including a read module, a delay buffer, and a least mean square module. The read module is configured to read charge levels of memory cells of a nonvolatile memory and to generate read signals based on the charge levels of the memory cells of the nonvolatile memory. The delay buffer is configured to delay the read signals and to generate delayed read signals. The least mean square module is configured to generate mean values of the charge levels used to program the memory cells based on (i) differences between the read signals and the delayed read signals and (ii) a scaling factor. The scaling factor is based on variations in the charge levels due to cycling of the memory cells of the nonvolatile memory.


Find Patent Forward Citations

Loading…