The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 19, 2016

Filed:

Apr. 11, 2013
Applicant:

Sandisk Technologies Inc., Plano, TX (US);

Inventors:

Sateesh Desireddi, Andhra Pradesh, IN;

Sachin Krishne Gowda, Hassan, IN;

Jayaprakash Naradasi, Bangalore, IN;

Anand Venkitachalam, Bangalore, IN;

Manuel Antonio D'Abreu, El Dorado Hills, CA (US);

Stephen Skala, Fremont, CA (US);

Assignee:

SANDISK TECHNOLOGIES INC., Plano, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3422 (2013.01); G11C 16/26 (2013.01); G11C 16/349 (2013.01); G11C 16/3427 (2013.01); G11C 16/3436 (2013.01);
Abstract

A data storage device includes non-volatile memory and a controller. The controller is configured to read first data from the non-volatile memory. The first data indicates a first count of storage elements of the group that have a first activation status when sensed with a first reference voltage at a first time. The controller is configured to read second data from the non-volatile memory. The second data indicates a second count of storage elements of the group that have the first activation status when sensed with the first reference voltage at a second time. The controller is configured to generate an updated first reference voltage at least partially based on a difference between the first count and the second count and based on one or more parameters corresponding to a distribution of threshold voltages of storage elements at the first time.


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