The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 19, 2016

Filed:

Feb. 02, 2015
Applicant:

Sandisk Technologies, Inc., Plano, TX (US);

Inventors:

James V. Hart, San Jose, CA (US);

Kenneth Louie, Sunnyvale, CA (US);

Khanh Nguyen, Fremont, CA (US);

Man Mui, Fremont, CA (US);

Assignee:

SanDisk Technologies Inc., Plano, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 16/04 (2006.01); G11C 16/26 (2006.01); G11C 16/08 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/3459 (2013.01);
Abstract

When applying a sensing voltage at one end of a word line of a non-volatile memory circuit, an initial kick, where the voltage is initially raised somewhat above its final desired voltage, is used. Using on-chip circuitry for the determination of the RC time constant of the word lines allows for this kick to be trimmed to the specifics of the circuit. To further improve settling times for read operations is NAND type architectures, when raising the voltage to the desired read level on a selected word line, a reverse kick, where the non-selected word line's voltage is dropped briefly, can be applied to neighboring non-selected word lines.


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