The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 19, 2016

Filed:

Dec. 15, 2014
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Kota Nishikawa, Yokohama, JP;

Masanori Hatakeyama, Kawasaki, JP;

Takanori Eto, Yokohama, JP;

Atsuhiro Suzuki, Yokohama, JP;

Assignee:

KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/14 (2006.01); G11C 16/04 (2006.01); G11C 16/16 (2006.01); G11C 16/34 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 16/14 (2013.01); G11C 16/0483 (2013.01); G11C 16/3445 (2013.01); G11C 11/5635 (2013.01); G11C 16/0408 (2013.01);
Abstract

A nonvolatile semiconductor memory device according to an embodiment comprises a control unit, during a data erase, applying at least to a word line connected to a memory cell disposed most to a source line side a lower control voltage than that applied to a word line connected to a memory cell disposed most to a bit line side, of a plurality of word lines connected to at least a plurality of memory cells mutually written with data of an identical number of bits in a cell string.


Find Patent Forward Citations

Nishikawa, Kota. (2016). Nonvolatile semiconductor memory device and method of operating the same (U.S. Patent No. 9318207). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9318207

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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