The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2016
Filed:
Aug. 09, 2013
Western Digital (Fremont), Llc, Fremont, CA (US);
Wei Gao, Fremont, CA (US);
Guanghong Luo, Fremont, CA (US);
Lily Yao, Hayward, CA (US);
Ming Mao, Dublin, CA (US);
Ming Jiang, San Jose, CA (US);
Western Digital (Fremont), LLC, Fremont, CA (US);
Abstract
A method of fabricating a magnetic device includes forming a sensor having a pinned layer and a free layer. A first reactive ion etch of a sensor stack patterns a hard mask layer with a photoresist image to form a first hard mask. Then a second reactive ion etch is performed to form an extended pinned layer. The method also includes depositing an insulating layer after the second reactive ion etch to protect exposed edges of the sensor stack, and then providing a chemical mechanical planarization (CMP) stop layer on the insulating layer. Subsequently, a CMP of the sensor stack is performed to remove a portion of the insulating layer. The resulting structure is substantially free of residue on the back edges of the sensor.