The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2016
Filed:
Mar. 14, 2013
Coventor, Inc., Cary, NC (US);
Daniel Faken, Peabody, MA (US);
Kenneth B. Greiner, Arlington, MA (US);
David M. Fried, South Salem, NY (US);
Stephen R. Breit, Wayland, MA (US);
Coventor, Inc., Cary, NC (US);
Abstract
A virtual fabrication environment for semiconductor device structure development is discussed that enables the use of a selective epitaxy process to virtually model epitaxial growth of a crystalline material layer. The epitaxial growth occurs on a crystalline substrate surface of a virtually fabricated model device structure. A surface growth rate may be defined over possible 3D surface orientations of the virtually fabricated device structure by modeling the growth rates of the three major families of crystal planes. Growth rates along neighboring non-crystalline material may also be modeled.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile