The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2016
Filed:
Sep. 04, 2013
Applicant:
Kobe Steel, Ltd., Hyogo, JP;
Inventors:
Kazushi Hayashi, Kobe, JP;
Toshihiro Kugimiya, Kobe, JP;
Tomoya Kishi, Kobe, JP;
Aya Miki, Kobe, JP;
Assignee:
Kobe Steel, Ltd., Hyogo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
F21V 9/16 (2006.01); G01J 1/58 (2006.01); G01T 1/10 (2006.01); G21H 3/02 (2006.01); G21K 5/00 (2006.01); H01J 65/06 (2006.01); G01N 21/64 (2006.01); H01L 21/66 (2006.01); H01L 29/24 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
G01N 21/6489 (2013.01); H01L 22/12 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01); H01L 29/78693 (2013.01);
Abstract
This method for evaluating an oxide semiconductor thin film includes evaluating the stress stability of an oxide semiconductor thin film on the basis of the light emission intensity of luminescent light excited when radiating an electron beam or excitation light at a sample at which the oxide semiconductor thin film is formed. The stress stability of the oxide semiconductor thin film is evaluated on the basis of the light emission intensity (L) observed in the range of 1.6-1.9 eV of the luminescent light excited from the oxide semiconductor thin film.