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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9312853 B1

PDFFull Text
Date of Patent:
Apr. 12, 2016

Filed:

Feb. 02, 2015

High frequency semiconductor switch circuit and high frequency radio system including same

Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Inventors:

Atusi Sigetani, Osaka, JP;

Takahito Miyazaki, Kyoto, JP;

Yusuke Nozaki, Osaka, JP;

Masaru Fukusen, Shiga, JP;

Assignee:

PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD., Osaka, JP;

Attorney:

McDermott Will & Emery LLP

Primary Examiner:

Patrick O'Neill

Int. Cl.
CPC ...
H03K 17/693 (2006.01); H04B 1/48 (2006.01); H03K 17/16 (2006.01); H03K 17/689 (2006.01); H03K 17/687 (2006.01); H03K 17/06 (2006.01);
U.S. Cl.
CPC ...
H03K 17/689 (2013.01); H03K 17/162 (2013.01); H03K 17/6877 (2013.01); H03K 17/693 (2013.01); H04B 1/48 (2013.01); H03K 2017/066 (2013.01); H03K 2217/0054 (2013.01);
Abstract

A path switching FET and a shunt FET are separated from each other by a capacitor. The gates of the path switching FET and the shunt FET are controlled using an inverter circuit having a first internal power supply voltage (e.g., 2.5 V) as a power supply. The sources and drains of the path switching FET and the shunt FET are controlled using an inverter circuit having a second internal power supply voltage (e.g., 1.25 V) which is smaller than the first internal power supply voltage, as a power supply.

Find Patent Forward Citations

Sigetani, Atusi. (2016). High frequency semiconductor switch circuit and high frequency radio system including same (U.S. Patent No. 9312853). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9312853

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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