The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2016

Filed:

Sep. 23, 2013
Applicant:

Dsp Group, Ltd., Herzeliya, IL;

Inventors:

Alexander Mostov, Rishon Letzion, IL;

Yaron Hasson, Elad, IL;

Ron Pongratz, Tel Aviv, IL;

Sharon Betzalel, Ashkelon, IL;

Assignee:

DSP GROUP LTD., Herzeliya, IL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04B 1/44 (2006.01); H04B 1/00 (2006.01); H04B 1/38 (2015.01); H03F 1/56 (2006.01); H01F 38/14 (2006.01); H03F 3/213 (2006.01); H03F 3/195 (2006.01); H02M 3/04 (2006.01); H01F 27/28 (2006.01); H01F 27/29 (2006.01); H01F 38/00 (2006.01); H03F 3/19 (2006.01); H03F 3/21 (2006.01); H03F 3/68 (2006.01); H03F 3/193 (2006.01); H01F 19/04 (2006.01); H03F 1/02 (2006.01); H03F 3/45 (2006.01);
U.S. Cl.
CPC ...
H03F 1/565 (2013.01); H01F 19/04 (2013.01); H01F 27/2804 (2013.01); H01F 27/29 (2013.01); H01F 38/00 (2013.01); H01F 38/14 (2013.01); H02M 3/04 (2013.01); H03F 1/0227 (2013.01); H03F 1/0261 (2013.01); H03F 3/19 (2013.01); H03F 3/193 (2013.01); H03F 3/195 (2013.01); H03F 3/21 (2013.01); H03F 3/211 (2013.01); H03F 3/213 (2013.01); H03F 3/45179 (2013.01); H03F 3/68 (2013.01); H04B 1/44 (2013.01); H03F 2200/102 (2013.01); H03F 2200/105 (2013.01); H03F 2200/387 (2013.01); H03F 2200/451 (2013.01); H03F 2200/534 (2013.01); H03F 2200/537 (2013.01); H03F 2200/541 (2013.01); Y02B 60/50 (2013.01);
Abstract

A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.


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