The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2016
Filed:
Apr. 21, 2015
Nichia Corporation, Kaminaka-cho, Anan-shi, Tokushima, JP;
Shingo Masui, Tokushima, JP;
NICHIA CORPORATION, Anan-Shi, JP;
Abstract
A nitride semiconductor laser element includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer between the n-type semiconductor layer and the p-type semiconductor layer. The active layer includes well layers, and at least one barrier layer provided between the well layers. The barrier layer includes a barrier layer having band gap energy higher than that of an n-side optical guide layer. The p-type semiconductor layer includes an electron barrier layer having band gap energy higher than that of all barrier layers comprised in the active layer. A p-side optical guide layer includes a first region disposed on a side of a final well layer and having band gap energy lower than that of the n-side optical guide layer, and a second region disposed on a side of the electron barrier layer and having band gap energy higher than that of the n-side optical guide layer.