The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2016

Filed:

Nov. 30, 2014
Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Inventors:

Shinji Yoshida, Shiga, JP;

Atsunori Mochida, Osaka, JP;

Takahiro Okaguchi, Toyama, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/028 (2006.01); H01S 5/30 (2006.01); H01S 5/323 (2006.01); H01S 5/343 (2006.01); H01S 5/068 (2006.01); B82Y 20/00 (2011.01);
U.S. Cl.
CPC ...
H01S 5/0282 (2013.01); B82Y 20/00 (2013.01); H01S 5/028 (2013.01); H01S 5/0281 (2013.01); H01S 5/06825 (2013.01); H01S 5/3013 (2013.01); H01S 5/323 (2013.01); H01S 5/343 (2013.01); H01S 5/34333 (2013.01);
Abstract

Provided is a highly reliable nitride semiconductor laser element having a robust end face protection film not being peeled even in laser operation. The nitride semiconductor laser element includes: a semiconductor multi-layer structure including a group III nitride semiconductor and having a light-emitting end face; and a protection film including a dielectric multi-layer film and covering the light-emitting end face of the semiconductor multi-layer structure. The protection film includes an end face protection layer and an oxygen diffusion suppression layer arranged sequentially in stated order from the light-emitting end face. The end face protection layer includes a crystalline film comprising nitride including aluminum. The oxygen diffusion suppression layer has a structure in which a metal oxide film is between silicon oxide films. The metal oxide film is crystallized by laser light.


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