The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2016

Filed:

Sep. 10, 2014
Applicant:

Advanced Optoelectronic Technology, Inc., Hsinchu Hsien, TW;

Inventors:

Ching-Hsueh Chiu, Hsinchu, TW;

Ya-Wen Lin, Hsinchu, TW;

Po-Min Tu, Hsinchu, TW;

Shih-Cheng Huang, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01S 5/026 (2006.01); H01S 5/10 (2006.01); H01L 33/10 (2010.01); H01S 5/343 (2006.01); H01S 5/02 (2006.01); H01L 33/40 (2010.01);
U.S. Cl.
CPC ...
H01S 5/026 (2013.01); H01L 27/15 (2013.01); H01S 5/105 (2013.01); H01L 33/10 (2013.01); H01L 33/405 (2013.01); H01S 5/0213 (2013.01); H01S 5/34333 (2013.01);
Abstract

An optoelectronic module includes a substrate, an LED and a laser LED formed on the substrate, simultaneously. A method for manufacturing an optoelectronic module includes following steps: providing a sapphire substrate, and forming two adoped GaN layers, an N-type GaN layer, an active layer and a P-type GaN layer on the sapphire substrate in sequence; providing a substrate and forming a metallic adhering layer on the substrate; forming an ohmic contact layer and a reflecting layer on the P-type GaN layer in series; arranging the reflecting layer on the adhering layer; stripping the sapphire substrate and the two doped GaN layers from the N-type GaN layer to form a semiconductor structure; etching a top end of the semiconductor structure to divide the semiconductor structure into a laser LED region and an LED region; forming two N-type electrodes on the LED region and an LED region, respectively.


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