The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2016
Filed:
Mar. 15, 2013
SK Hynix Inc., Icheon-si, KR;
Soo Gil Kim, Icheon-si, KR;
SK HYNIX INC., Icheon, KR;
Abstract
The present invention relates to a variable resistance memory device and a method for forming the same. A variable resistance memory device according to the present invention includes a first electrode; a second electrode spaced apart from the first electrode; a resistance variable layer and a metal-insulator transition layer provided between the first electrode and the second electrode; and a heat barrier layer provided (i) between the first electrode and the metal-insulator transition layer, (ii) between the metal-insulator transition layer and the resistance variable layer, or (iii) between the second electrode and the metal-insulator transition layer. The present invention prevents dissipation of heat generated in the metal-insulator transition layer using a thermal boundary resistance (TBR) phenomenon, and thus current and voltage to operate the variable resistance memory device can be reduced.