The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2016
Filed:
Apr. 02, 2012
Manuel Bibes, Paris, FR;
Vincent Garcia, Paris, FR;
Agnès Barthelemy, Janvry, FR;
Karim Bouzehouane, Janvry, FR;
Stéphane Fusil, La Ville du Bois, FR;
Manuel Bibes, Paris, FR;
Vincent Garcia, Paris, FR;
Agnès Barthelemy, Janvry, FR;
Karim Bouzehouane, Janvry, FR;
Stéphane Fusil, La Ville du Bois, FR;
THALES, Neuilly-sur-Seine, FR;
UNIVERSITE PARIS-SUD, Orsay, FR;
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, Paris, FR;
Abstract
The invention relates to a method of implementing a ferroelectric tunnel junction, said junction comprising to films each forming an electrode-type conductive element, and separated by a film forming a ferroelectric element acting as the tunnel barrier, said ferroelectric element being able to possess a remanent polarization. According to the invention, the ferroelectric element possesses a domain structure, said domains corresponding to regions of the ferroelectric element the polarization of which is oriented one way in a single direction; and when a voltage is applied between the electrodes, the absolute value of the voltage being equal to or higher than the absolute value of what is called a saturation voltage, the ferroelectric element main comprises only a single domain; and when a voltage is applied between the electrodes, the absolute value of the voltage being lower than the absolute value of what is called the saturation voltage, the ferroelectric element comprises a plurality of separate domains, the spatial distribution of said domains and their proportions being controlled by the chosen voltage value.