The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2016
Filed:
Jul. 18, 2014
National Sun Yat-sen University, Kaohsiung, TW;
I-Kai Lo, Kaohsiung, TW;
Yu-Chi Hsu, Kaohsiung, TW;
Cheng-Hung Shih, Kaohsiung, TW;
Wen-Yuan Pang, Kaohsiung, TW;
NATIONAL SUN YAT-SEN UNIVERSITY, Kaohsiung, TW;
Abstract
An epitaxy structure of a light emitting element includes a gallium nitride substrate, an N-type gallium nitride layer, a quantum well unit, and a P-type gallium nitride layer. The gallium nitride substrate includes a gallium nitride buffer layer, a gallium nitride hexagonal prism, and a gallium nitride hexagonal pyramid. The gallium nitride hexagonal prism extends from the gallium nitride buffer layer along an axis. The gallium nitride hexagonal pyramid extends from the gallium nitride hexagonal prism along the axis and gradually expands to form a hexagonal frustum. The N-type gallium nitride layer is located on the gallium nitride hexagonal pyramid. The quantum well unit includes an indium gallium nitride layer located on the N-type gallium nitride layer and a gallium nitride layer located on the indium gallium nitride layer. The P-type gallium nitride layer is located on the gallium nitride layer.