The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2016
Filed:
Aug. 07, 2014
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Jin Sub Lee, Suwon-si, KR;
Jung Sub Kim, Hwaseong-si, KR;
Sam Mook Kang, Osan-si, KR;
Yeon Woo Seo, Hwaseong-si, KR;
Han Kyu Seong, Seoul, KR;
Dae Myung Chun, Hwaseong-si, KR;
Young Jin Choi, Seoul, KR;
Jae Hyeok Heo, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;
Abstract
There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the first conductivity-type semiconductor base layer, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively, wherein the first conductivity-type semiconductor core has different first and second crystal planes in crystallographic directions.