The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2016
Filed:
Sep. 24, 2013
Applicant:
Lg Innotek Co., Ltd., Seoul, KR;
Inventors:
Assignee:
LG INNOTEK CO., LTD., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 33/06 (2010.01); H01L 33/04 (2010.01); H01L 33/32 (2010.01); H01L 33/22 (2010.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); H01L 33/04 (2013.01); H01L 33/32 (2013.01); H01L 33/0025 (2013.01); H01L 33/22 (2013.01); H01L 2924/0002 (2013.01);
Abstract
Embodiments of the present invention include a light emitting element, a method for manufacturing the light-emitting element according to one embodiment of the present invention, comprises: a first conductive semiconductor layer; a GaN-based superlattice layeron the first conductive semiconductor layer; an active layeron the GaN-based superlattice layer; and a second conductive semiconductor layeron the active layer, wherein the GaN-based superlattice layerhas a bandgap energy level that varies in a direction from the first conductive semiconductor layerto the active layer