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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9312422 B1

PDFFull Text
Date of Patent:
Apr. 12, 2016

Filed:

Nov. 29, 2011

Light receiving element, semiconductor epitaxial wafer, method for manufacturing the light receiving element, method for manufacturing the semiconductor epitaxial wafer, and detecting device

Applicants:

Kohei Miura, Osaka, JP;

Hiroshi Inada, Osaka, JP;

Yasuhiro Iguchi, Osaka, JP;

Tadashi Saito, Osaka, JP;

Inventors:

Kohei Miura, Osaka, JP;

Hiroshi Inada, Osaka, JP;

Yasuhiro Iguchi, Osaka, JP;

Tadashi Saito, Osaka, JP;

Assignee:

Sumitomo Electric Industries, Ltd., Osaka-shi, JP;

Attorneys:

Venable LLP

Michael A. Sartori

Tamatane J. Aga

Primary Examiner:

Robert Bachner

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 31/109 (2006.01); B82Y 20/00 (2011.01); H01L 27/144 (2006.01); H01L 31/0352 (2006.01); H01L 31/075 (2012.01); H01L 21/02 (2006.01); H01L 31/0304 (2006.01); H01L 31/105 (2006.01); H01L 31/18 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 31/109 (2013.01); B82Y 20/00 (2013.01); H01L 21/02392 (2013.01); H01L 21/02463 (2013.01); H01L 21/02466 (2013.01); H01L 21/02505 (2013.01); H01L 21/02546 (2013.01); H01L 21/02549 (2013.01); H01L 27/1446 (2013.01); H01L 27/1464 (2013.01); H01L 31/0304 (2013.01); H01L 31/035236 (2013.01); H01L 31/075 (2013.01); H01L 31/105 (2013.01); H01L 31/184 (2013.01); Y02E 10/544 (2013.01); Y02E 10/548 (2013.01); Y02P 70/521 (2015.11);
Abstract

A light receiving element includes an InP substrate that is transparent to light having a wavelength of 3 to 12 μm, a buffer layer located in contact with the InP substrate, and a light-receiving layer having a multiple quantum well structure, the light-receiving layer having a cutoff wavelength of 3 μm or more and being lattice-matched with the buffer layer. In the light receiving element, the buffer layer is epitaxially grown on the InP substrate while the buffer layer and the InP substrate exceed a range of a normal lattice-matching condition, and the buffer layer is constituted by a GaSb layer.

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