The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2016

Filed:

May. 17, 2012
Applicants:

Yasuhiro Yamada, Kanagawa, JP;

Tsutomu Tanaka, Kanagawa, JP;

Makoto Takatoku, Kanagawa, JP;

Ryoichi Ito, Aichi, JP;

Michiru Senda, Kanagawa, JP;

Inventors:

Yasuhiro Yamada, Kanagawa, JP;

Tsutomu Tanaka, Kanagawa, JP;

Makoto Takatoku, Kanagawa, JP;

Ryoichi Ito, Aichi, JP;

Michiru Senda, Kanagawa, JP;

Assignee:

SONY CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 29/10 (2006.01); H01L 31/00 (2006.01); H01L 31/105 (2006.01); H01L 31/0216 (2014.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 31/105 (2013.01); H01L 27/14663 (2013.01); H01L 31/02164 (2013.01);
Abstract

Disclosed herein is a photoelectric conversion element including: a first semiconductor layer of a first conductivity type provided above a substrate; a second semiconductor layer of a second conductivity type provided in a higher layer than the first semiconductor layer; a third semiconductor layer of a third conductivity type provided between the first and second semiconductor layers and lower in electrical conductivity than the first and second semiconductor layers; and a light-shielding layer provided between the substrate and first semiconductor layer.


Find Patent Forward Citations

Loading…