The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2016

Filed:

Jul. 27, 2012
Applicants:

Sung-chul Lee, Yongin-si, KR;

Doo-youl Lee, Yongin-si, KR;

Young-jin Kim, Yongin-si, KR;

Young-su Kim, Yongin-si, KR;

Young-soo Kim, Yongin-si, KR;

Dong-hun Lee, Yongin-si, KR;

Inventors:

Sung-Chul Lee, Yongin-si, KR;

Doo-Youl Lee, Yongin-si, KR;

Young-Jin Kim, Yongin-si, KR;

Young-Su Kim, Yongin-si, KR;

Young-Soo Kim, Yongin-si, KR;

Dong-Hun Lee, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 31/0224 (2006.01); H01L 31/068 (2012.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/022441 (2013.01); H01L 31/0682 (2013.01); H01L 31/1804 (2013.01); Y02E 10/547 (2013.01); Y02P 70/521 (2015.11);
Abstract

A method of fabricating a solar cell includes forming a doped portion having a first conductive type on a semiconductor substrate, growing an oxide layer on the semiconductor substrate, forming a plurality of recess portions in the oxide layer, further growing the oxide layer on the semiconductor substrate, forming a doped portion having a second conductive type on areas of the semiconductor substrate corresponding to the recess portions, forming a first conductive electrode electrically coupled to the doped portion having the first conductive type, and forming a second conductive electrode on the semiconductor substrate and electrically coupled to the doped portion having the second conductive type, wherein a gap between the doped portions having the first and second conductive types corresponds to a width of the oxide layer formed by further growing the oxide layer.


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