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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9312397 B1

PDFFull Text
Date of Patent:
Apr. 12, 2016

Filed:

Dec. 20, 2012

Transistor structure, method for manufacturing a transistor structure, force-measuring system

Applicant:

Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v., Munich, DE;

Inventors:

Ignaz Eisele, Icking, DE;

Martin Heigl, Weiden, DE;

Karl Haberger, Martinsried, DE;

Assignee:

Fraunhofer-Gesellschaft zur Foerderung der angewandten Forshung e.V., Munich, DE;

Attorneys:

Michael A. Glenn

Perkins Coie LLP

Primary Examiner:

Thomas L Dickey

Int. Cl.
CPC ...
H01L 29/84 (2006.01); H01L 21/02 (2006.01); H01L 29/78 (2006.01); B81B 1/00 (2006.01); B81C 1/00 (2006.01); G01L 9/00 (2006.01); G01L 1/14 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/84 (2013.01); B81B 1/00 (2013.01); B81C 1/00 (2013.01); G01L 1/148 (2013.01); G01L 9/0073 (2013.01); H01L 21/02 (2013.01); H01L 29/78 (2013.01); H01L 29/51 (2013.01);
Abstract

A transistor structure includes a first terminal region, a second terminal region and a channel region therebetween in a semiconductor substrate. Additionally, the transistor structure includes a control electrode associated with the channel region, the control electrode having a control electrode portion which is elastically deflectable under the action of a force and spaced apart from the channel region. The distance between the control electrode portion and the channel region is changed based on the action of force.

Find Patent Forward Citations

Eisele, Ignaz. (2016). Transistor structure, method for manufacturing a transistor structure, force-measuring system (U.S. Patent No. 9312397). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9312397

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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