The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2016
Filed:
Jun. 07, 2012
Daisuke Matsumoto, Tokyo, JP;
Naoki Tega, Tokyo, JP;
Yasuhiro Shimamoto, Tokyo, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A technique for improving characteristics of a semiconductor device (DMOSFET) is provided. A semiconductor device is configured so as to include: an n-type source layer () disposed on an upper portion of a first surface side of an SiC substrate (); a p body layer () which surrounds the source layer and has a channel region; an n-type drift layer () which is in contact with the p body layer (); a gate electrode () which is disposed on an upper portion of the channel region via a gate insulating film; and a first player () which is disposed in the p body layer (), extends to a portion below the nsource layer (), and serves as a buried semiconductor region having an impurity concentration higher than that of the p body layer (). In this manner, since the first player () is formed in the middle of the p body layer (), it is possible to reduce the diffusion resistance of the p body layer (). Thus, it is possible to make a parasitic bipolar transistor harder to turn on.