The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2016

Filed:

Feb. 12, 2014
Applicant:

Wafertech, Llc, Camas, WA (US);

Inventor:

Yimin Wang, Camas, WA (US);

Assignee:

WAFERTECH, LLC, Camas, WA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/788 (2006.01); H01L 29/423 (2006.01); H01L 27/115 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42364 (2013.01); H01L 21/28273 (2013.01); H01L 27/11521 (2013.01); H01L 29/42328 (2013.01);
Abstract

Provided is a floating gate flash cell and method for forming the same. The flash includes two floating gate transistors and a common source area therebetween. Each floating gate transistor includes a floating gate having a central portion disposed over a substrate surface and opposed lateral edges that extend into trenches and below the substrate surface. A control gate is disposed over said floating gate with a control gate dielectric between the floating gate and the control gate. The floating gates have side edges that are orthogonal to the opposed lateral edges and a common source area which is a substrate diffusion area, is positioned between respective facing side edges of the floating gates.


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