The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2016

Filed:

Nov. 26, 2014
Applicant:

Okmetic Oyj, Vantaa, FI;

Inventor:

Atte Haapalinna, Espoo, FI;

Assignee:

OKMETIC OYJ, Vantaa, FI;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/32 (2006.01); H01L 29/16 (2006.01); H01L 29/04 (2006.01); H01L 21/02 (2006.01); H01L 23/66 (2006.01); H01L 21/304 (2006.01);
U.S. Cl.
CPC ...
H01L 29/32 (2013.01); H01L 21/02002 (2013.01); H01L 21/02008 (2013.01); H01L 21/02013 (2013.01); H01L 21/304 (2013.01); H01L 23/66 (2013.01); H01L 29/04 (2013.01); H01L 29/16 (2013.01); H01L 2924/0002 (2013.01);
Abstract

The application relates to a high-resistivity silicon substrate () with a reduced radio frequency loss for a radio frequency integrated passive device. The substrate comprising a bulk zone () comprising high-resistivity bulk silicon and a preserved sub-surface lattice damage zone () comprising fractured silicon above the bulk zone. The lattice damage zone is processed into the substrate and the preserved lattice damage zone is configured to achieve the RF loss reduction of the substrate by suppressing a parasitic surface conduction.


Find Patent Forward Citations

Haapalinna, Atte. (2016). High-resistive silicon substrate with a reduced radio frequency loss for a radio-frequency integrated passive device (U.S. Patent No. 9312345). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9312345

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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