The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2016

Filed:

Dec. 16, 2011
Applicants:

L. Robert Baker, Albany, CA (US);

Hyungtak Seo, Seoul, KR;

Antoine Hervier, Paris, FR;

Gabor A. Somorjai, Berkeley, CA (US);

Inventors:

L. Robert Baker, Albany, CA (US);

Hyungtak Seo, Seoul, KR;

Antoine Hervier, Paris, FR;

Gabor A. Somorjai, Berkeley, CA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/06 (2012.01); H01L 21/31 (2006.01); H01L 29/24 (2006.01); H01L 21/02 (2006.01); H01L 21/324 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 29/24 (2013.01); H01L 21/02565 (2013.01); H01L 21/02576 (2013.01); H01L 21/02631 (2013.01); H01L 21/324 (2013.01); H01L 27/2436 (2013.01); H01L 45/08 (2013.01); H01L 45/1233 (2013.01); H01L 45/146 (2013.01); H01L 45/1625 (2013.01); H01L 45/1641 (2013.01);
Abstract

A new composition of matter is disclosed wherein oxygen vacancies in a semiconducting transition metal oxide such as titanium dioxide are filled with a halogen such as Fluorine, whereby the conductivity of the composition is greatly enhanced, while at the same time the chemical stability of the composition is greatly improved. Stoichiometric titanium dioxide having less than 3 % oxygen vacancies is subject to fluorine insertion such that oxygen vacancies are filled, limited amounts of fluorine replace additional oxygen atoms and fluorine interstitially inserts into the body of the TiOcomposition.


Find Patent Forward Citations

Loading…