The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2016
Filed:
Mar. 10, 2014
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Shinichiro Misu, Tokyo, JP;
Kazutoshi Nakamura, Himeji, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
This device includes a first base layer of a first conduction type. A second base-layer of a second conduction type is provided above the first base-layer. A first semiconductor layer of the first conduction type is above an opposite side of the second base-layer to the first base-layer. A second semiconductor layer of the second conduction type is above an opposite side of the first base-layer to the second base-layer. A plurality of first electrodes are provided at the first semiconductor layer and the second base-layer via first insulating films. A second electrode is provided between adjacent ones of the first electrodes and provided at the first semiconductor layer and the second base-layer via a second insulating film. A resistance of the first base-layer above a side of the second electrode is lower than a resistance of the first base-layer above a side of the first electrodes.