The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2016

Filed:

Jun. 23, 2015
Applicant:

Renesas Electronics Corporation, Kanagawa, JP;

Inventors:

Ken Ozawa, Kanagawa, JP;

Hiroyuki Kunishima, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 29/94 (2006.01); H01L 49/02 (2006.01); H01L 27/06 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 28/60 (2013.01); H01L 23/5226 (2013.01); H01L 27/0629 (2013.01); H01L 27/10814 (2013.01);
Abstract

A semiconductor device having a capacitor which includes a first electrode electrically coupled to a transistor and a second electrode separate from the first electrode and covered with an interlayer insulating film, in which a plurality of coupling holes are formed in the interlayer insulating film and are in contact with the second electrode at the lower ends; and, when the capacitance of the second electrode is represented by C [nF] and the total area of the lower ends of the coupling holes is represented by A [μm], the following expression (1) is satisfied.≦1.98 [nF/μm]  (1) The elution of the second electrode constituting the capacitor at the lower ends of the coupling holes is suppressed.


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