The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2016
Filed:
Apr. 16, 2015
Qualcomm, Incorporated, San Diego, CA (US);
Renatas Jakushokas, San Diego, CA (US);
Vaishnav Srinivas, San Diego, CA (US);
Robert Won Chol Kim, San Marcos, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
Capacitor structures capable of providing both low-voltage capacitors and high-voltage capacitors are described herein. In one embodiment, a capacitor structure comprises a first electrode formed from a first metal layer, a second electrode formed from a second metal layer, and a third electrode formed from a third metal layer, wherein second and third electrodes are spaced farther apart than the first and second electrodes. The capacitor structure also comprises a first dielectric layer between the first and second electrodes, and a second dielectric layer between the second and third metal layers, wherein the second dielectric layer has a larger thickness than the first dielectric layer. The first electrode is coupled to a first power-supply rail, the third electrode is coupled to a second power-supply rail, and the second power-supply rail has a higher power-supply voltage than the first power-supply rail.