The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2016
Filed:
Jan. 28, 2014
Applicant:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Inventors:
Assignee:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2463 (2013.01); H01L 27/2436 (2013.01); H01L 45/04 (2013.01); H01L 45/1233 (2013.01); H01L 45/146 (2013.01); H01L 45/147 (2013.01); H01L 45/1683 (2013.01);
Abstract
According to an embodiment, a first impurity diffusion layer is provided in a region lower than a drain region and the first impurity diffusion layer diffuses impurities of a second conductivity type. A second impurity diffusion layer is provided between the drain region and the first impurity diffusion layer, and the second impurity diffusion layer diffuses impurities of a first conductivity type or the second conductivity type, and a concentration of the second impurity diffusion layer is lower than that of the first conductivity type of the drain region and that of the second conductivity type of the first impurity diffusion layer.