The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2016

Filed:

Aug. 29, 2014
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventor:

Hirofumi Yamashita, Kawasaki, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/14 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14643 (2013.01); H01L 27/1461 (2013.01); H01L 27/1463 (2013.01); H01L 27/1464 (2013.01); H01L 27/14603 (2013.01); H01L 27/14607 (2013.01); H01L 27/14612 (2013.01); H01L 27/14614 (2013.01); H01L 27/14627 (2013.01); H01L 27/14638 (2013.01); H01L 27/14641 (2013.01); H01L 27/14689 (2013.01);
Abstract

According to one embodiment, in a solid-state imaging device, a signal storage portion in each of a plurality of pixels includes a first semiconductor region and a second semiconductor region. The first semiconductor region is of a first conductive type. The first semiconductor region coveres a side wall of an element isolation portion on a side of the signal storage portion. The second semiconductor region is of a second conductive type. The second conductive type is an opposite conductive type to the first conductive type. The second semiconductor region is arranged vertically in a depth direction from a deeper position than a front surface in a semiconductor substrate and extending in a plate shape along the first semiconductor region.


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