The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2016
Filed:
Jan. 09, 2015
Samsung Electronics Co., Ltd., Suwon-si, KR;
Kyung-Tae Jang, Seoul, KR;
Myoungbum Lee, Hwasung, KR;
Seungmok Shin, Yongin-si, KR;
JinGyun Kim, Yongin-si, KR;
Yeon-Sil Sohn, Seongnam-si, KR;
Seung-Yup Lee, Seongnam-si, KR;
Dae-Hun Choi, Yongin-si, KR;
Abstract
Methods of manufacturing a three-dimensional semiconductor device are provided. The method includes: forming a thin film structure, where first and second material layers of at least 2n (n is an integer more than 2) are alternately and repeatedly stacked, on a substrate; wherein the first material layer applies a stress in a range of about 0.1×109 dyne/cmto about 10×109 dyne/cmto the substrate and the second material layer applies a stress in a range of about −0.1×109 dyne/cmto about −10×109 dyne/cmto the substrate.