The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2016

Filed:

Jul. 12, 2013
Applicant:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Inventors:

Sun-Me Lim, Yongin-si, KR;

Kyung-Woo Kim, Seoul, KR;

Myung-Soo Seo, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 27/11 (2006.01); H01L 27/088 (2006.01); H01L 21/8238 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/092 (2013.01); H01L 21/823892 (2013.01); H01L 27/0207 (2013.01); H01L 27/088 (2013.01); H01L 27/1104 (2013.01);
Abstract

A semiconductor device includes first and second well regions having a first conductivity type, and a third well region between the first and second well regions having a second conductivity type different from the first conductivity type. A first active region is in the first well region. A second active region is in the second well region. A third active region is in the third well region. The third active region is closer to the second active region than to the first active region. A fourth active region is in the third well region. The fourth active region is closer to the first active region than to the second active region. A first conductive pattern is across the first and third active regions. A second conductive pattern is across the second and fourth active regions and parallel to the first conductive pattern.


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