The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2016
Filed:
Jul. 22, 2014
Pun Jae . Choi, Gyunggi-do, KR;
Sang Bum Lee, Gyunggi-do, KR;
Jin Bock Lee, Gyunggi-do, KR;
Yu Seung Kim, Gyunggi-do, KR;
Sang Yeob Song, Gyunggi-do, KR;
Pun Jae . Choi, Gyunggi-do, KR;
Sang Bum Lee, Gyunggi-do, KR;
Jin Bock Lee, Gyunggi-do, KR;
Yu Seung Kim, Gyunggi-do, KR;
Sang Yeob Song, Gyunggi-do, KR;
SAMSUNG ELECTRONICS CO., LTD., Seoul, KR;
Abstract
In a semiconductor light emitting device, a light emitting structure includes a first-conductivity type semiconductor layer, an active layer, and a second-conductivity type semiconductor layer, which are sequentially formed on a conductive substrate. A second-conductivity type electrode includes a conductive via and an electrical connection part. The conductive via passes through the first-conductivity type semiconductor layer and the active layer, and is connected to the inside of the second-conductivity type semiconductor layer. The electrical connection part extends from the conductive via and is exposed to the outside of the light emitting structure. An insulator electrically separates the second-conductivity type electrode from the conductive substrate, the first-conductivity type semiconductor layer, and the active layer. A passivation layer is formed to cover at least a side surface of the active layer in the light emitting structure. An uneven structure is formed on a path of light emitted from the active layer.