The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2016
Filed:
Sep. 07, 2012
Applicants:
Hyo-seok Lee, Gyeonggi-do, KR;
Seung-jin Yeom, Gyeonggi-do, KR;
Inventors:
Hyo-Seok Lee, Gyeonggi-do, KR;
Seung-Jin Yeom, Gyeonggi-do, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 23/482 (2006.01); H01L 21/764 (2006.01); H01L 21/768 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 23/4821 (2013.01); H01L 21/764 (2013.01); H01L 21/7682 (2013.01); H01L 21/76831 (2013.01); H01L 21/76897 (2013.01); H01L 27/10855 (2013.01); H01L 27/10885 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A method for fabricating a semiconductor device includes forming, over a substrate, a plurality of first conductive structures which are separated from one another; forming multi-layered dielectric patterns including a first dielectric layer which covers upper ends and both sidewalls of the first conductive structures; removing portions of the first dielectric layer starting from lower end portions of the first conductive structures to define air gaps, and forming second conductive structures which are filled between the first conductive structures.