The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2016
Filed:
Oct. 29, 2013
Applicant:
Boe Technology Group Co., Ltd., Beijing, CN;
Inventors:
Xiangyong Kong, Beijing, CN;
Jun Cheng, Beijing, CN;
Dongfang Wang, Beijing, CN;
Guangcai Yuan, Beijing, CN;
Assignee:
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 21/445 (2006.01); H01L 29/417 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 21/445 (2013.01); H01L 29/41733 (2013.01); H01L 29/41758 (2013.01); H01L 29/41775 (2013.01); H01L 29/42384 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78618 (2013.01); H01L 29/78621 (2013.01); H01L 27/1288 (2013.01);
Abstract
Embodiments of the invention provide a thin film transistor and a manufacturing method thereof and a display device. The thin film transistor includes a gate electrode, a gate insulation layer, an active layer, an ohmic contact layer, a source electrode and a drain electrode, and the source electrode and the drain electrode are connected to the active layer by the ohmic contact layer. The ohmic contact layer is provided at a lateral side of the active layer and contacts the lateral side of the active layer.