The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2016

Filed:

Jul. 15, 2013
Applicants:

Jeffrey W. Baldwin, Fairfax, VA (US);

Bernard R. Matis, Alexandria, VA (US);

James S. Burgess, Nahsua, NH (US);

Felipe Bulat-jara, Washington, DC (US);

Adam L. Friedman, Silver Spring, MD (US);

Brian H Houston, Fairfax, VA (US);

Inventors:

Jeffrey W. Baldwin, Fairfax, VA (US);

Bernard R. Matis, Alexandria, VA (US);

James S. Burgess, Nahsua, NH (US);

Felipe Bulat-Jara, Washington, DC (US);

Adam L. Friedman, Silver Spring, MD (US);

Brian H Houston, Fairfax, VA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01B 13/30 (2006.01); H01B 5/14 (2006.01); H01L 29/16 (2006.01); H01L 21/223 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02518 (2013.01); H01B 5/14 (2013.01); H01B 13/30 (2013.01); H01L 21/02381 (2013.01); H01L 21/02488 (2013.01); H01L 21/02527 (2013.01); H01L 21/02664 (2013.01); H01L 21/2236 (2013.01); H01L 29/1606 (2013.01);
Abstract

A method of introducing a bandgap in single layer graphite on a SiOsubstrate comprising the steps of preparing graphene flakes and CVD grown graphene films on a SiO/Si substrate and performing hydrogenation of the graphene. Additionally, controlling the majority carrier type via surface adsorbates.


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