The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2016

Filed:

Mar. 02, 2015
Applicant:

Western Digital (Fremont), Llc, Fremont, CA (US);

Inventors:

Miao Wang, San Jose, CA (US);

Wei Gao, Fremont, CA (US);

Lingyun Miao, Fremont, CA (US);

Hai Sun, Milpitas, CA (US);

Ming Mao, Dublin, CA (US);

Assignee:

Western Digital (Fremont), LLC, Fremont, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01); H01F 41/02 (2006.01);
U.S. Cl.
CPC ...
H01F 41/02 (2013.01);
Abstract

A first layered structure includes a magnetic layer, a first hard mask layer, a second hard mask layer, and a first stepping layer. The first stepping layer is etched through to create a sidewall. A mask-width definition layer is deposited on and adjacent to the sidewall, until a mask-width definition layer thickness is achieved adjacent to the sidewall. The mask-width definition layer is removed except on the sidewall. The first stepping layer is removed. The second hard mask layer is etched away, except for a remainder of the second hard mask layer beneath the mask-width definition layer. The first hard mask layer is etched away around the remainder of the second hard mask layer, to form a dual layer hard mask comprising the remainder of the second hard mask layer and the remainder of the first hard mask layer. The magnetic layer is ion milled around the dual hard mask.


Find Patent Forward Citations

Loading…