The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2016
Filed:
Jun. 03, 2014
Applicant:
National Tsing Hua University, HsinChu, TW;
Inventors:
Meng-Fan Chang, Hsinchu, TW;
Ching-Hao Chuang, Hsinchu, TW;
Assignee:
National Tsing Hua University, Hsin Chu, TW;
Primary Examiner:
Int. Cl.
CPC ...
G11C 15/00 (2006.01); G11C 15/04 (2006.01); G11C 5/06 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 15/046 (2013.01); G11C 5/06 (2013.01); G11C 13/0002 (2013.01);
Abstract
A scheme for non-volatile ternary content-addressable memory with resistive memory device is proposed. The non-volatile ternary content-addressable memory comprises five transistors including a pair of search transistors with a first search transistor and a second search transistor, a read transistor, a write transistor and a match line transistor, wherein a match line is coupled to the match line transistor; and a pair of variable resistances have a first variable resistance and a second variable resistance. The pair of search transistors is coupled to the pair of variable resistances.