The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2016
Filed:
Apr. 04, 2014
Sandisk Technologies Inc., Plano, TX (US);
Ariel Navon, Revava, IL;
Idan Alrod, Herzliya, IL;
Eran Sharon, Rishon Lezion, IL;
Ishai Ilani, Dolev, IL;
Tz-yi Liu, Palo Alto, CA (US);
Tianhong Yan, Saratoga, CA (US);
Gopinath Balakrishnan, Santa Clara, CA (US);
SanDisk Technologies Inc., Plano, TX (US);
Abstract
A programming technique for a set of resistance-switching memory cells such as ReRAM cell involves programming the low resistance cells to the high resistance state (in a reset process) early in a programming operation, before programming the high resistance cells to the low resistance state (in a set process), to minimize losses due to leakage currents. The reset process can be performed in one or more phases. In some cases, a current limit is imposed which limits the number of cells which can be reset at the same time. Initially, the cells which are to be reset and set are identified by comparing a logical value of their current resistance state to a logical value of write data. If there is a match, the cell is not programmed. If there is not a match, the cell is programmed.