The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2016
Filed:
Jul. 04, 2014
Applicants:
Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;
Centre National DE LA Recherche Scientifique, Paris, FR;
Inventors:
Grégory Di Pendina, Echirolles, FR;
Virgile Javerliac, Grenoble, FR;
Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); G11C 11/16 (2006.01); G11C 14/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0021 (2013.01); G11C 11/165 (2013.01); G11C 13/0002 (2013.01); G11C 14/0081 (2013.01);
Abstract
The invention concerns a memory device comprising: a first memory cell comprising a first resistive non-volatile data storage element programmable to store a first bit of data; and a second memory cell comprising a second resistive non-volatile data storage element programmable to store a second bit of data; wherein said first resistive element is configured to have a first data retention duration, and said second resistive element is configured to have a second data retention duration different from said first data retention duration.