The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2016

Filed:

Dec. 14, 2010
Applicants:

Hongwu Liu, Sendai, JP;

Kaifeng Yang, Sendai, JP;

Yoshiro Hirayama, Sendai, JP;

Inventors:

Hongwu Liu, Sendai, JP;

Kaifeng Yang, Sendai, JP;

Yoshiro Hirayama, Sendai, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 33/44 (2006.01); G01R 33/32 (2006.01); G01N 24/08 (2006.01); B82Y 10/00 (2011.01); H01L 29/66 (2006.01); G01R 33/30 (2006.01);
U.S. Cl.
CPC ...
G01R 33/323 (2013.01); B82Y 10/00 (2013.01); G01N 24/08 (2013.01); H01L 29/66984 (2013.01); G01R 33/307 (2013.01);
Abstract

Provided is a total electrical nuclear-spin polarization device that is applicable to many narrow-gap semiconductor two-dimensional quantum structures such as InSb with a large g-factor and with a mobility having a normal value. A nuclear-spin polarization devicecreates a state where the Landau-level separation and the Zeeman-level separation in a sample are equal to each other in a magnetic field, thereby crossing different spin states, and detects nuclear-spin polarization from a resistance change at the crossing point caused by the nuclear-spin polarization.


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