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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9306558 B1

PDFFull Text
Date of Patent:
Apr. 05, 2016

Filed:

Oct. 02, 2013

Field-effect transistor

Applicant:

Sharp Kabushiki Kaisha, Osaka-shi, Osaka, JP;

Inventors:

Takamitsu Suzuki, Osaka, JP;

Takahiko Andoh, Osaka, JP;

Satoshi Morishita, Osaka, JP;

Assignee:

SHARP KABUSHIKI KAISHA, Osaka, JP;

Attorney:

Birch, Stewart, Kolasch & Birch, LLP

Primary Examiner:

Brandon S Cole

Int. Cl.
CPC ...
H03K 17/687 (2006.01); H01L 29/417 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 27/02 (2006.01); H01L 27/06 (2006.01); H01L 29/205 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H03K 17/687 (2013.01); H01L 27/0207 (2013.01); H01L 27/0617 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/41758 (2013.01); H01L 29/7786 (2013.01); H01L 29/7787 (2013.01); H01L 21/823475 (2013.01); H01L 24/05 (2013.01); H01L 27/0883 (2013.01);
Abstract

This FET includes: a source electrode pad, which is formed on a source electrode and which is electrically connected to the source electrode; and/or a drain electrode pad, which is formed on the drain electrode and which is electrically connected to the drain electrode. The source electrode pad has a cutout for reducing a parasitic capacitance between the source electrode pad and the drain electrode, and the drain electrode pad has a cutout for reducing a parasitic capacitance between the drain electrode pad and the source electrode.

Find Patent Forward Citations

Suzuki, Takamitsu. (2016). Field-effect transistor (U.S. Patent No. 9306558). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9306558

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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