The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 05, 2016

Filed:

Feb. 15, 2013
Applicant:

Avago Technologies General Ip (Singapore) Pte. Ltd., Singapore, SG;

Inventors:

Ruiyu Fang, Turin, IT;

Giammarco Rossi, Turin, IT;

Roberto Paoletti, Turin, IT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/22 (2006.01); H01S 5/02 (2006.01); H01S 5/10 (2006.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01S 5/2202 (2013.01); H01S 5/1082 (2013.01); H01S 5/0201 (2013.01); H01S 5/1014 (2013.01); H01S 5/343 (2013.01);
Abstract

An edge-emitting etched-facet optical semiconductor structure includes a substrate, an active multiple quantum well (MQW) region formed on the substrate, a ridge waveguide formed over the MQW region extending in substantially a longitudinal direction between a waveguide first etched end facet disposed in a first window and a waveguide second etched end facet disposed in a second window, and first and second trenches having non-uniform widths extending in substantially the longitudinal direction between the first and second windows.


Find Patent Forward Citations

Quick Actions:

Fang, Ruiyu. (2016). Semiconductor lasers and etched-facet integrated devices having non-uniform trenches (U.S. Patent No. 9306373). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9306373

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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