The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9306113 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 05, 2016

Filed:

Jun. 15, 2011
Applicant:

Monuko Du Plessis, Pretoria, ZA;

Inventor:

Monuko Du Plessis, Pretoria, ZA;

Assignee:

INSIAVA (PTY) LIMITED, Pretoria, ZA;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 33/00 (2010.01); H01L 33/20 (2010.01); H01L 33/34 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0016 (2013.01); H01L 33/20 (2013.01); H01L 33/34 (2013.01);
Abstract

A light emitting device comprises a body of an indirect bandgap semiconductor material. A junction region is formed between a first region in the body of a first doping kind and a second region of the body of a second doping kind of first concentration. A third region of the second doping kind of a second concentration is spaced from the junction region by the second region. The second concentration is higher than the first concentration. A terminal arrangement is connected to the body for, in use, reverse biasing the first junction region into a breakdown mode, thereby to cause emission of light. The device is configured such that a depletion region associated with the junction region reaches through the shaped region to reach the third region, before the junction enters the breakdown mode.


Find Patent Forward Citations

Loading…