The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2016
Filed:
Jan. 24, 2014
Applicant:
Tsmc Solar Ltd., Taichung, TW;
Inventor:
Chien-Yao Huang, New Taipei, TW;
Assignee:
TSMC Solar Ltd., Taichung, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 31/032 (2006.01); H01L 31/0352 (2006.01); H01L 31/18 (2006.01); H01L 31/0224 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0322 (2013.01); H01L 31/022441 (2013.01); H01L 31/0352 (2013.01); H01L 31/18 (2013.01); H01L 31/1864 (2013.01); Y02P 70/521 (2015.11);
Abstract
A method of fabricating a photovoltaic device includes a step of forming an absorber layer above a substrate, and a step of forming a surface layer on the absorber layer. The absorber layer includes an I-III-VIcompound, which contains a Group I element, a Group III element and a Group VI element. The surface layer includes an I-III-VIcompound, which contains a Group I element, a Group III element and a Group VI element, and has an atomic ratio of the Group I element to the Group III element in the range of from 0.1 to 0.9.