The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2016
Filed:
Jan. 22, 2014
Applicant:
Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;
Inventors:
Jae-Seob Lee, Yongin, KR;
Dong-Un Jin, Yongin, KR;
Assignee:
SAMSUNG DISPLAY CO., LTD., Yongin, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78603 (2013.01); H01L 27/1218 (2013.01); H01L 51/0097 (2013.01);
Abstract
A thin-film transistor (TFT) substrate includes a flexible substrate. A first barrier layer is formed on the flexible substrate. The first barrier layer includes a first silicon oxide layer and a first silicon nitride layer. A second barrier layer is formed on the first barrier layer. The second barrier layer includes a second silicon oxide layer and a second silicon nitride layer. A TFT layer is formed on the second barrier layer. The second silicon oxide layer is disposed adjacent to the TFT layer.